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| SLOTTED PHOTOINTERRUPTER Description The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter. 12.8 0.05 (.504) 5.2 (.205) 3.2 0.15 (.126) 6.4 (.252) MIT-5A11C Package Dimensions Unit: mm ( inches ) 1 4 2 3 (.150) 3.8 l l l l For- direct pc board or Dual - in - line socket mounting Fast switching speed Choice of mounting configuration. 0.5 (.020) 9.6 2.5 (.378) (.098) NOTE 1. Tolerance is 0.25 mm (.006") unless otherwise noted. Absolute Maximum Ratings @TA =25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Maximum Rating 50 5 75 30 5 75 100 -25oC to +85oC -40oC to +100oC Unit mA V mW V V mW mW Unity Opto Technology Co., Ltd. 5.8 l Non -contact switching 7.0 (.276) Features 1.72 (.068 04/01/2002 MIT-5A11C Optical-Electrical Characteristics @TA =25oC Parameter Input Forward Voltage Reverse Current Output Collector Dark Current Collector Emitter Collector Current Transfer Cha- Response Time (RISE) racteristics Response Time (FALL) symbol VF IR Iceo VCE(SAT) Ic (on) tr tf 500 20 20 100 100 Min. Typ. 1.2 Max. 1.4 10 100 0.4 Unit. V Test Conditions IF =20mA A VR =5V nA V S S Vce =10V Ic=0.1mA,Ee=0.1mW/cm2 A IF =20mA, Vce =5V Ic=100A, Vce =5V RL =1k, d =1mm Typical Optical-Electrical Characteristic Curves Forward Current IF (mA) 50 40 30 20 10 0 -25 0 25 50 75 100 Power Dissipation (mW) 60 120 100 80 60 40 20 0 -25 0 25 50 75 100 PD , PC PTOT Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) Collector Current Ic (A) 1000 700 600 500 400 300 200 100 0 0 Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature Vce=2V Ta=25J 100 10 1 0 Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Ta=25oC 1 2 3 4 5 10 15 20 25 30 Forward Current IF (mA) Fig.4 Collector Current vs Forward Voltage Relative Collector Current (%) 120 100 80 60 40 20 0 -25 0 25 50 75 100 Collector Current Ic (A) 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 4mA IF=15mA 10mA 20mA Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Ambient Temperature TA ( oC ) Fig.6 Relative Collector Current VS. TA Unity Opto Technology Co., Ltd. 04/01/2002 MIT-5A11C Typical Optical-Electrical Characteristic Curves Collector Dark Current ICEO 10-6 10-7 10-8 10-9 10-10 0 VCE=20V 1000 V CE =2V I C =100mA Ta=25 J Response Time (s) 100 10 1 Ambient Temperature TA ( oC ) Fig.7 Collector Dark Current vs. Ambient Temperature 25 50 75 100 0.1 0.01 0.1 1 10 100 Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance 100 Relative Sensitivity (%) Ta=25J 80 60 40 20 0 700 Input Input Output Response Time Measurement Circuit t 90 % 10 % t tr tf IL VR Output VCC 800 900 1000 1100 1200 Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) Sensing Position Characteristics (Typical) X Y I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 J Relative light current IL (%) 100 Ta=25 J (Center of optical axis) 50 X Y 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) 0 + + Distance d (mm) Unity Opto Technology Co., Ltd. 04/01/2002 |
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